Silicon Oxide Circuits Break Barrier: Nanocrystal Conductors Could Lead to Massive, Robust 3-D Storage
A 1k silicon oxide memory has been assembled by Rice and a commercial partner as a proof-of-concept. Silicon nanowire forms when charge is pumped through the silicon oxide, creating a two-terminal resistive switch. (Credit: Images courtesy Jun Yao/Rice University) ScienceDaily (Aug. 31, 2010) — Rice University scientists have created the first two-terminal memory chips that [...]

